Back Contact to CdTe Device Research
| Faculty: , , , Michael Heben , Dengbing Li , , , , , |
| Students: , , Bhuiyan Anwar , , Griffin Barros-King , Ebin Bastola , Sandip Bista , Jacob Gibbs , , , Niva Jayswal , , Mark Monarch , Dipendra Pokhrel , Gazi Quader , , , Austin Snyder , |
| Alumni: , , , Alex Cimaroli , , , Max Junda , , Prakash Koirala , , Jian Li , , AJ Mathews , Naba Paudel , , , Nafsika Theodoropoulous , , , Nick Xiao , |
CdTe has a deep valence band at -5.9 eV, making it difficult to make a low-barrier back contact. Historically, doping the back of CdTe with Cu has been used to reduce this barrier. More recently, inclusion of a buffer layer, typically a semiconductor, has shown promising results and one such material is currently used in commercially available panels. At PVIC, we are investigating a number of materials to reduce this barrier at the back contact in an attempt to improve device performance and reduce cost. Click through the slide show to learn more about our projects.
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